Attribute
Description
Manufacturer Part Number
ALD110900APAL
Description
MOSFET 2N-CH 10.6V 8PDIP
Manufacturer Lead Time
--
Note : GST will not be applied to orders shipping outside of India

Stock:

Distributor: 117

Quantity Unit Price Ext. Price
500 ₹ 394.76000 ₹ 1,97,380.00
100 ₹ 441.70000 ₹ 44,170.00
50 ₹ 478.91000 ₹ 23,945.50
1 ₹ 865.58000 ₹ 865.58

Stock:

Distributor: 108


Quantity Unit Price Ext. Price
1 ₹ 862.41000 ₹ 862.41
10 ₹ 479.71000 ₹ 4,797.10
100 ₹ 441.44000 ₹ 44,144.00
500 ₹ 394.27000 ₹ 1,97,135.00

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line EPAD®, Zero Threshold™
IC Encapsulation Type Tube
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual) Matched Pair
Transistor Special Function -
Drain-Source Breakdown Volts 10.6V
Continuous Drain Current at 25C -
Max On-State Resistance 500Ohm @ 4V
Max Threshold Gate Voltage 10mV @ 1µA
Max Gate Charge at Vgs -
Max Input Cap at Vds 2.5pF @ 5V
Maximum Power Handling 500mW
Ambient Temp Range 0°C ~ 70°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Through Hole
Component Housing Style 8-DIP (0.300", 7.62mm)
Vendor Package Type 8-PDIP

Description

Configured in a manner identified as 2 N-Channel (Dual) Matched Pair. Supports a Vdss drain-to-source voltage rated at 10.6V. The maximum input capacitance reaches 2.5pF @ 5V at Vds to protect the device. The input capacitance is specified at 2.5pF @ 5V at Vds for peak performance. Mounting configuration Through Hole for structural stability. Temperature range 0°C ~ 70°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tube for safeguarding or transporting components. Style of the enclosure/case 8-DIP (0.300", 7.62mm) that offers mechanical and thermal protection. Type of package 8-PDIP that preserves the integrity of the device. Maximum power capability 500mW for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id and Vgs 500Ohm @ 4V for MOSFET specifications. Classification series for the product or component EPAD®, Zero Threshold™. Supplier package type 8-PDIP for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 10mV @ 1µA for MOSFET threshold specifications.