Attribute
Description
Manufacturer Part Number
ALD110808ASCL
Description
MOSFET 4N-CH 10.6V 16SOIC
Manufacturer Lead Time
--
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Stock:

Distributor: 117

Quantity Unit Price Ext. Price
50 ₹ 588.97000 ₹ 29,448.50

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line EPAD®
IC Encapsulation Type Tube
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 4 N-Channel, Matched Pair
Transistor Special Function -
Drain-Source Breakdown Volts 10.6V
Continuous Drain Current at 25C 12mA, 3mA
Max On-State Resistance 500Ohm @ 4.8V
Max Threshold Gate Voltage 810mV @ 1µA
Max Gate Charge at Vgs -
Max Input Cap at Vds 2.5pF @ 5V
Maximum Power Handling 500mW
Ambient Temp Range 0°C ~ 70°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 16-SOIC (0.154", 3.90mm Width)
Vendor Package Type 16-SOIC

Description

Configured in a manner identified as 4 N-Channel, Matched Pair. Is capable of sustaining a continuous drain current (Id) of 12mA, 3mA at 25°C. Supports a Vdss drain-to-source voltage rated at 10.6V. The maximum input capacitance reaches 2.5pF @ 5V at Vds to protect the device. The input capacitance is specified at 2.5pF @ 5V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range 0°C ~ 70°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tube for safeguarding or transporting components. Style of the enclosure/case 16-SOIC (0.154", 3.90mm Width) that offers mechanical and thermal protection. Type of package 16-SOIC that preserves the integrity of the device. Maximum power capability 500mW for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id and Vgs 500Ohm @ 4.8V for MOSFET specifications. Classification series for the product or component EPAD®. Supplier package type 16-SOIC for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 810mV @ 1µA for MOSFET threshold specifications.