Attribute
Description
Manufacturer Part Number
ALD1105SBL
Description
MOSFET 2N/2P-CH 10.6V 14SOIC
Manufacturer Lead Time
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Stock:

Distributor: 117

Quantity Unit Price Ext. Price
500 ₹ 289.25000 ₹ 1,44,625.00
100 ₹ 339.56000 ₹ 33,956.00
50 ₹ 369.83000 ₹ 18,491.50
1 ₹ 683.52000 ₹ 683.52

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tube
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N and 2 P-Channel Matched Pair
Transistor Special Function -
Drain-Source Breakdown Volts 10.6V
Continuous Drain Current at 25C -
Max On-State Resistance 500Ohm @ 5V
Max Threshold Gate Voltage 1V @ 1µA
Max Gate Charge at Vgs -
Max Input Cap at Vds 3pF @ 5V
Maximum Power Handling 500mW
Ambient Temp Range 0°C ~ 70°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 14-SOIC (0.154", 3.90mm Width)
Vendor Package Type 14-SOIC

Description

Configured in a manner identified as 2 N and 2 P-Channel Matched Pair. Supports a Vdss drain-to-source voltage rated at 10.6V. The maximum input capacitance reaches 3pF @ 5V at Vds to protect the device. The input capacitance is specified at 3pF @ 5V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range 0°C ~ 70°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tube for safeguarding or transporting components. Style of the enclosure/case 14-SOIC (0.154", 3.90mm Width) that offers mechanical and thermal protection. Type of package 14-SOIC that preserves the integrity of the device. Maximum power capability 500mW for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id and Vgs 500Ohm @ 5V for MOSFET specifications. Supplier package type 14-SOIC for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1V @ 1µA for MOSFET threshold specifications.