Description

Features a maximum gate trigger current (Igt) rated at 50 µA. Indicates the maximum holding current recorded at 1 mA. Is designed to manage surge current Itsm rated at 8A, 9A for 50/60Hz. Features a maximum off-state current of 2 µA. Offers a maximum average on-state current It(AV) of 500 mA. Supports RMS on-state current rated at 800 mA. Mounting configuration Through Hole for structural stability. Temperature range 125°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Box (TB) for safeguarding or transporting components. Style of the enclosure/case TO-226-3, TO-92-3 (TO-226AA) Formed Leads that offers mechanical and thermal protection. Type of package TO-92-3 that preserves the integrity of the device. Product status Active concerning availability and lifecycle. The Sensitive Gate SCR type for thyristor properties. Supplier package type TO-92-3 for component selection. Maximum gate trigger voltage 800 mV for SCR devices. The voltage 600 V when the device is not active for switches or semiconductors. The highest voltage drop Vtm 1.7 V in the active state for semiconductors.