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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Bulk | |
| Internal Structure Design | Single | |
| Thyristor Diode Count | 1 SCR | |
| Off-State Voltage Rating | 2 kV | |
| Max Average On-State Current | 2100 A | |
| Max RMS On-State Current | 3300 A | |
| Max Gate Trigger Volts | 3 V | |
| Max Gate Trigger Amps | 300 mA | |
| Non-Repetitive Surge 50/60Hz | 35000A, 38000A | |
| Maximum Holding Current | - | |
| Ambient Temp Range | -40°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Chassis Mount | |
| Component Housing Style | TO-200AF |
Description
Features a maximum gate trigger current (Igt) rated at 300 mA. Is designed to manage surge current Itsm rated at 35000A, 38000A for 50/60Hz. Offers a maximum average on-state current It(AV) of 2100 A. Supports RMS on-state current rated at 3300 A. Mounting configuration Chassis Mount for structural stability. Overall count of SCRs/diodes 1 SCR for circuit safeguarding. Temperature range -40°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case TO-200AF that offers mechanical and thermal protection. Configuration Single for components or materials. Maximum gate trigger voltage 3 V for SCR devices. The voltage 2 kV when the device is not active for switches or semiconductors.
