200mA (Io), trr Recovery,55ns, Reverse Leakage Current @ Vr,300µA @ 60V, Capacitance at Voltage and Frequency,195pF @ 1V, 1MHz, Junction Temp Range,125°C (Max), Attachment Mounting Style,Surface Mount, Component Housing Style,DO-214AC, SMA./>
Attribute
Description
Manufacturer Part Number
XBS306S17R-G
Description
Diodes Rectifiers - Single, 60V, 3A
Manufacturer Lead Time
1 week

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Product Attributes

Type Description
Category
Semiconductor Diode Category Schottky
Reverse DC Voltage(Vr) 60V
Average DC Output Current 3A
Forward Voltage (Vf) 660mV @ 3A
Operational Speed Rating Fast Recovery =< 500ns, > 200mA (Io)
trr Recovery 55ns
Reverse Leakage Current @ Vr 300µA @ 60V
Capacitance at Voltage and Frequency 195pF @ 1V, 1MHz
Heat Dissipation Resistance -
Junction Temp Range 125°C (Max)
Attachment Mounting Style Surface Mount
Component Housing Style DO-214AC, SMA

Description

Assesses resistance at forward current 660mV @ 3A for LED or diode testing. Enables capacitance at voltage Vr and frequency indicated as 195pF @ 1V, 1MHz. Provides an average rectified current (Io) recorded at 3A. Shows the type of diode identified as Schottky. Mounting configuration Surface Mount for structural stability. Temperature range 125°C (Max) at the junction to safeguard components. Style of the enclosure/case DO-214AC, SMA that offers mechanical and thermal protection. Reverse recovery time 55ns for switching diodes. Operational speed Fast Recovery =< 500ns, > 200mA (Io) for mechanical or data tasks. Maximum Vce(on) at Vge Schottky for transistor specifications.