Attribute
Description
Manufacturer Part Number
XBS104V14R-G
Manufacturer
Description
Diodes Rectifiers - Single,
40V,
1A
Manufacturer Lead Time
1 week
Note :
GST will not be applied to orders shipping outside of India
Stock:
Distributor: 145
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1835 | ₹ 14.56000 | ₹ 26,717.60 |
| 1370 | ₹ 16.24000 | ₹ 22,248.80 |
| 1060 | ₹ 16.80000 | ₹ 17,808.00 |
| 770 | ₹ 17.36000 | ₹ 13,367.20 |
| 500 | ₹ 17.92000 | ₹ 8,960.00 |
| 205 | ₹ 21.84000 | ₹ 4,477.20 |
Stock:
Distributor: 108
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 46.28000 | ₹ 46.28 |
| 10 | ₹ 30.97000 | ₹ 309.70 |
| 100 | ₹ 23.76000 | ₹ 2,376.00 |
| 500 | ₹ 18.07000 | ₹ 9,035.00 |
| 1000 | ₹ 16.20000 | ₹ 16,200.00 |
| 3000 | ₹ 12.90000 | ₹ 38,700.00 |
| 6000 | ₹ 11.84000 | ₹ 71,040.00 |
| 9000 | ₹ 10.59000 | ₹ 95,310.00 |
| 24000 | ₹ 10.50000 | ₹ 2,52,000.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Schottky | |
| Reverse DC Voltage(Vr) | 40V | |
| Average DC Output Current | 1A | |
| Forward Voltage (Vf) | 410mV @ 1A | |
| Operational Speed Rating | Fast Recovery =< 500ns, > 200mA (Io) | |
| trr Recovery | 41ns | |
| Reverse Leakage Current @ Vr | 2mA @ 40V | |
| Capacitance at Voltage and Frequency | 150pF @ 1V, 1MHz | |
| Heat Dissipation Resistance | - | |
| Junction Temp Range | 125°C (Max) | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SOD-123 |
Description
Assesses resistance at forward current 410mV @ 1A for LED or diode testing. Enables capacitance at voltage Vr and frequency indicated as 150pF @ 1V, 1MHz. Provides an average rectified current (Io) recorded at 1A. Shows the type of diode identified as Schottky. Mounting configuration Surface Mount for structural stability. Temperature range 125°C (Max) at the junction to safeguard components. Style of the enclosure/case SOD-123 that offers mechanical and thermal protection. Reverse recovery time 41ns for switching diodes. Operational speed Fast Recovery =< 500ns, > 200mA (Io) for mechanical or data tasks. Maximum Vce(on) at Vge Schottky for transistor specifications.
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