Attribute
Description
Manufacturer Part Number
XBS053V15R-G
Manufacturer
Description
Diodes Rectifiers - Single,
20V,
500mA
Manufacturer Lead Time
1 week
Note :
GST will not be applied to orders shipping outside of India
Stock:
Distributor: 121
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 5 | ₹ 60.38000 | ₹ 301.90 |
| 10 | ₹ 37.20000 | ₹ 372.00 |
| 100 | ₹ 23.92000 | ₹ 2,392.00 |
| 500 | ₹ 19.46000 | ₹ 9,730.00 |
| 1000 | ₹ 15.08000 | ₹ 15,080.00 |
| 5000 | ₹ 11.28000 | ₹ 56,400.00 |
Stock:
Distributor: 108
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 61.41000 | ₹ 61.41 |
| 10 | ₹ 37.82000 | ₹ 378.20 |
| 100 | ₹ 24.30000 | ₹ 2,430.00 |
| 500 | ₹ 19.76000 | ₹ 9,880.00 |
| 1000 | ₹ 16.55000 | ₹ 16,550.00 |
| 2500 | ₹ 15.31000 | ₹ 38,275.00 |
| 5000 | ₹ 11.48000 | ₹ 57,400.00 |
| 8000 | ₹ 11.04000 | ₹ 88,320.00 |
| 24000 | ₹ 10.41000 | ₹ 2,49,840.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Schottky | |
| Reverse DC Voltage(Vr) | 20V | |
| Average DC Output Current | 500mA | |
| Forward Voltage (Vf) | 470mV @ 500mA | |
| Operational Speed Rating | Fast Recovery =< 500ns, > 200mA (Io) | |
| trr Recovery | 8ns | |
| Reverse Leakage Current @ Vr | 100µA @ 20V | |
| Capacitance at Voltage and Frequency | 12pF @ 10V, 1MHz | |
| Heat Dissipation Resistance | - | |
| Junction Temp Range | 125°C (Max) | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SC-79, SOD-523 |
Description
Assesses resistance at forward current 470mV @ 500mA for LED or diode testing. Enables capacitance at voltage Vr and frequency indicated as 12pF @ 10V, 1MHz. Provides an average rectified current (Io) recorded at 500mA. Shows the type of diode identified as Schottky. Mounting configuration Surface Mount for structural stability. Temperature range 125°C (Max) at the junction to safeguard components. Style of the enclosure/case SC-79, SOD-523 that offers mechanical and thermal protection. Reverse recovery time 8ns for switching diodes. Operational speed Fast Recovery =< 500ns, > 200mA (Io) for mechanical or data tasks. Maximum Vce(on) at Vge Schottky for transistor specifications.
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