Attribute
Description
Manufacturer Part Number
XBS053V13R-G
Manufacturer
Description
Diodes Rectifiers - Single,
20V,
500mA
Manufacturer Lead Time
1 week
Note :
GST will not be applied to orders shipping outside of India
Stock:
Distributor: 118
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 3811 | ₹ 16.36000 | ₹ 62,347.96 |
| 763 | ₹ 18.69000 | ₹ 14,260.47 |
| 1 | ₹ 46.73000 | ₹ 46.73 |
Stock:
Distributor: 13
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 5 | ₹ 57.98000 | ₹ 289.90 |
Stock:
Distributor: 108
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 59.63000 | ₹ 59.63 |
| 10 | ₹ 36.67000 | ₹ 366.70 |
| 100 | ₹ 23.59000 | ₹ 2,359.00 |
| 500 | ₹ 18.24000 | ₹ 9,120.00 |
| 1000 | ₹ 16.38000 | ₹ 16,380.00 |
| 3000 | ₹ 12.82000 | ₹ 38,460.00 |
| 6000 | ₹ 10.24000 | ₹ 61,440.00 |
| 9000 | ₹ 10.06000 | ₹ 90,540.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Schottky | |
| Reverse DC Voltage(Vr) | 20V | |
| Average DC Output Current | 500mA | |
| Forward Voltage (Vf) | 470mV @ 500mA | |
| Operational Speed Rating | Fast Recovery =< 500ns, > 200mA (Io) | |
| trr Recovery | 8ns | |
| Reverse Leakage Current @ Vr | 100µA @ 20V | |
| Capacitance at Voltage and Frequency | 12pF @ 10V, 1MHz | |
| Heat Dissipation Resistance | - | |
| Junction Temp Range | 125°C (Max) | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SC-76, SOD-323 |
Description
Assesses resistance at forward current 470mV @ 500mA for LED or diode testing. Enables capacitance at voltage Vr and frequency indicated as 12pF @ 10V, 1MHz. Provides an average rectified current (Io) recorded at 500mA. Shows the type of diode identified as Schottky. Mounting configuration Surface Mount for structural stability. Temperature range 125°C (Max) at the junction to safeguard components. Style of the enclosure/case SC-76, SOD-323 that offers mechanical and thermal protection. Reverse recovery time 8ns for switching diodes. Operational speed Fast Recovery =< 500ns, > 200mA (Io) for mechanical or data tasks. Maximum Vce(on) at Vge Schottky for transistor specifications.
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