200mA (Io), trr Recovery,70ns, Reverse Leakage Current @ Vr,10µA @ 600V, Heat Dissipation Resistance,23°C/W Jl, Junction Temp Range,150°C (Max), Attachment Mounting Style,Surface Mount, Component Housing Style,DO-214AC, SMA./>
Attribute
Description
Manufacturer Part Number
RF08L6STE25
Manufacturer
Description
Other diodes
Manufacturer Lead Time
1 week

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Product Attributes

Type Description
Category
Semiconductor Diode Category Standard
Reverse DC Voltage(Vr) 600V
Average DC Output Current 800mA
Forward Voltage (Vf) 1.3V @ 800mA
Operational Speed Rating Fast Recovery =< 500ns, > 200mA (Io)
trr Recovery 70ns
Reverse Leakage Current @ Vr 10µA @ 600V
Capacitance at Voltage and Frequency -
Heat Dissipation Resistance 23°C/W Jl
Junction Temp Range 150°C (Max)
Attachment Mounting Style Surface Mount
Component Housing Style DO-214AC, SMA

Description

Assesses resistance at forward current 1.3V @ 800mA for LED or diode testing. Provides an average rectified current (Io) recorded at 800mA. Shows the type of diode identified as Standard. Mounting configuration Surface Mount for structural stability. Resistance during the on-state 23°C/W Jl for effective conduction. Temperature range 150°C (Max) at the junction to safeguard components. Style of the enclosure/case DO-214AC, SMA that offers mechanical and thermal protection. Reverse recovery time 70ns for switching diodes. Operational speed Fast Recovery =< 500ns, > 200mA (Io) for mechanical or data tasks. Thermal resistance measurement 23°C/W Jl for managing temperature. Maximum Vce(on) at Vge Standard for transistor specifications.