500ns, > 200mA (Io), Reverse Leakage Current @ Vr,40µA @ 1200V, Capacitance at Voltage and Frequency,10pF @ 400V, 1MHz, Heat Dissipation Resistance,0.5°C/W Cs, Junction Temp Range,-40°C ~ 175°C, Attachment Mounting Style,Through Hole, Component Housing Style,TO-220-2./>
Attribute
Description
Manufacturer Part Number
DSI30-12A
Manufacturer
Description
Rectifiers 30 Amps 1200V
Manufacturer Lead Time
38 weeks

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Product Attributes

Type Description
Category
Semiconductor Diode Category Standard
Reverse DC Voltage(Vr) 1200V (1.2kV)
Average DC Output Current 30A
Forward Voltage (Vf) 1.29V @ 30A
Operational Speed Rating Standard Recovery >500ns, > 200mA (Io)
trr Recovery -
Reverse Leakage Current @ Vr 40µA @ 1200V
Capacitance at Voltage and Frequency 10pF @ 400V, 1MHz
Heat Dissipation Resistance 0.5°C/W Cs
Junction Temp Range -40°C ~ 175°C
Attachment Mounting Style Through Hole
Component Housing Style TO-220-2

Description

Assesses resistance at forward current 1.29V @ 30A for LED or diode testing. Enables capacitance at voltage Vr and frequency indicated as 10pF @ 400V, 1MHz. Provides an average rectified current (Io) recorded at 30A. Shows the type of diode identified as Standard. Mounting configuration Through Hole for structural stability. Resistance during the on-state 0.5°C/W Cs for effective conduction. Temperature range -40°C ~ 175°C at the junction to safeguard components. Style of the enclosure/case TO-220-2 that offers mechanical and thermal protection. Operational speed Standard Recovery >500ns, > 200mA (Io) for mechanical or data tasks. Thermal resistance measurement 0.5°C/W Cs for managing temperature. Maximum Vce(on) at Vge Standard for transistor specifications.