200mA (Io), trr Recovery,50ns, Reverse Leakage Current @ Vr,20µA @ 600V, Heat Dissipation Resistance,0.5°C/W Cs, Junction Temp Range,-40°C ~ 150°C, Attachment Mounting Style,Through Hole, Component Housing Style,TO-220-2./>
Attribute
Description
Manufacturer Part Number
DSEI8-06A
Manufacturer
Description
DSEI Series 600 Vrrm 8 A 1.5 Vf Fast Recovery Epitaxial Diod...
Manufacturer Lead Time
38 weeks

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Product Attributes

Type Description
Category
Semiconductor Diode Category Standard
Reverse DC Voltage(Vr) 600V
Average DC Output Current 8A
Forward Voltage (Vf) 1.5V @ 8A
Operational Speed Rating Fast Recovery =< 500ns, > 200mA (Io)
trr Recovery 50ns
Reverse Leakage Current @ Vr 20µA @ 600V
Capacitance at Voltage and Frequency -
Heat Dissipation Resistance 0.5°C/W Cs
Junction Temp Range -40°C ~ 150°C
Attachment Mounting Style Through Hole
Component Housing Style TO-220-2

Description

Assesses resistance at forward current 1.5V @ 8A for LED or diode testing. Provides an average rectified current (Io) recorded at 8A. Shows the type of diode identified as Standard. Mounting configuration Through Hole for structural stability. Resistance during the on-state 0.5°C/W Cs for effective conduction. Temperature range -40°C ~ 150°C at the junction to safeguard components. Style of the enclosure/case TO-220-2 that offers mechanical and thermal protection. Reverse recovery time 50ns for switching diodes. Operational speed Fast Recovery =< 500ns, > 200mA (Io) for mechanical or data tasks. Thermal resistance measurement 0.5°C/W Cs for managing temperature. Maximum Vce(on) at Vge Standard for transistor specifications.