Attribute
Description
Manufacturer Part Number
C3D20060D
Manufacturer
Description
SIC SCHOTTKY DIODE,
600V,
2X10A,...
Manufacturer Lead Time
1 week
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Diode Setup | 1 Pair Common Cathode | |
| Semiconductor Diode Category | Silicon Carbide Schottky | |
| Reverse DC Voltage(Vr) (Max) | 600V | |
| Average DC Output Current | 10A | |
| Forward Voltage (Vf) | 1.8V @ 10A | |
| Operational Speed Rating | No Recovery Time > 500mA (Io) | |
| trr Recovery | 0ns | |
| Leakage at Vr | 50µA @ 600V | |
| Attachment Mounting Style | Through Hole, Radial | |
| Component Housing Style | TO-247-3 |
Description
Assesses resistance at forward current 1.8V @ 10A for LED or diode testing. Provides an average rectified current (Io) recorded at 10A. Employs diode configuration indicated as 1 Pair Common Cathode. Shows the type of diode identified as Silicon Carbide Schottky. Mounting configuration Through Hole, Radial for structural stability. Style of the enclosure/case TO-247-3 that offers mechanical and thermal protection. Reverse leakage current at Vr 50µA @ 600V for diode specifications. Reverse recovery time 0ns for switching diodes. Operational speed No Recovery Time > 500mA (Io) for mechanical or data tasks. Maximum Vce(on) at Vge Silicon Carbide Schottky for transistor specifications.
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