Description

Is capable of sustaining a continuous drain current (Id) of 17A (Ta), 68A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 25 V. Supports the drive voltage noted at 4.5V, 10V for RdsOn control. Includes FET category defined as N-Channel. Ensures maximum 18 nC @ 4.5 V gate charge at Vgs for improved switching efficiency. Maintains 18 nC @ 4.5 V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 1570 pF @ 13 V at Vds to protect the device. The input capacitance is specified at 1570 pF @ 13 V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -40°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case DirectFET™ Isometric SQ that offers mechanical and thermal protection. Type of package DIRECTFET™ SQ that preserves the integrity of the device. The maximum power dissipation 2.2W (Ta), 36W (Tc) for efficient thermal management. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 18 nC @ 4.5 V for MOSFET performance. Maximum Rds(on) at Id and Vgs 4.9mOhm @ 17A, 10V for MOSFET specifications. Classification series for the product or component HEXFET®. Supplier package type DIRECTFET™ SQ for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs ±20V for MOSFET specifications. Maximum Vgs(th) at Id 2.4V @ 50µA for MOSFET threshold specifications.